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Precursors
for Atomic Layer Deposition or Chemical Vapor Deposition (ALD/CVD)
One
of the key missions of Praxair Electronics’ research
and development programs is to leverage our materials science
platform into critical emerging application areas for our customers.
One rapidly evolving technology is deposition of next-generation
thin films using both atomic layer deposition (ALD) and chemical
vapor deposition (CVD). These will be increasingly deployed at
65nm, 45nm and smaller technology nodes. Praxair Electronics
is actively developing proprietary precursor chemicals and delivery
systems for both methods. Praxair’s experience in precursor
synthesis, deposition screening and purification will enable
our customers to advance their technology roadmaps in critical
fabrication areas such as high-k dielectrics, barriers, metal
gate, electrodes and low-k dielectric films.
Compound Guide |
Hafnium |
Silicon |
Hf(OC(CH3)3)4 |
Si(N(CH3)2)4 |
HfCl4 |
Si(N(C2H5)(CH3))4 |
Hf(N(C2H5)2)4 |
Si(NC4H8)4 |
Hf(N(CH3)2)4 |
HSi(N(C2H5)2)3 |
Hf(N(C2H5)(CH3))4 |
HSi(N(CH3)2)3 |
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Platinum |
Tantalum |
Pt(CH3)3(C5H4CH(CH3)2) |
Ta(NCH(CH3)2)(N(C2H5)2)3
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Pt(CH3)3(C5H4CH3) |
Ta(NC(CH3)3)(N(C2H5)2)3
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Pt(CH3)3(C5H4C(CH3)3) |
Ta(NC(CH3)3)(N(C2H5)(CH3))3
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Ruthenium |
Zirconium |
Ru(CO)3(C6H8) |
Zr(N(C2H5)2)4 |
Ru(C5H4C2H5)2 |
Zr(N(CH3)2)4 |
Ru(C5H4C2H5)(C5H4CH3) |
Zr(N(C2H5)(CH3))4 |
Ru(C5H5)2 |
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