Process Consumables: Global reach, local resources
Praxair Electronics

Precursors for Atomic Layer Deposition or Chemical Vapor Deposition (ALD/CVD)

1.2 L ampouleOne of the key missions of Praxair Electronics’ research and development programs is to leverage our materials science platform into critical emerging application areas for our customers. One rapidly evolving technology is deposition of next-generation thin films using both atomic layer deposition (ALD) and chemical vapor deposition (CVD). These will be increasingly deployed at 65nm, 45nm and smaller technology nodes. Praxair Electronics is actively developing proprietary precursor chemicals and delivery systems for both methods. Praxair’s experience in precursor synthesis, deposition screening and purification will enable our customers to advance their technology roadmaps in critical fabrication areas such as high-k dielectrics, barriers, metal gate, electrodes and low-k dielectric films.

Compound Guide
Hafnium Silicon
Hf(OC(CH3)3)4 Si(N(CH3)2)4
HfCl4 Si(N(C2H5)(CH3))4
Hf(N(C2H5)2)4 Si(NC4H8)4
Hf(N(CH3)2)4 HSi(N(C2H5)2)3
Hf(N(C2H5)(CH3))4 HSi(N(CH3)2)3
   
Platinum Tantalum
Pt(CH3)3(C5H4CH(CH3)2)

Ta(NCH(CH3)2)(N(C2H5)2)3

Pt(CH3)3(C5H4CH3)

Ta(NC(CH3)3)(N(C2H5)2)3

Pt(CH3)3(C5H4C(CH3)3)

Ta(NC(CH3)3)(N(C2H5)(CH3))3

 
Ruthenium Zirconium
Ru(CO)3(C6H8) Zr(N(C2H5)2)4
Ru(C5H4C2H5)2 Zr(N(CH3)2)4
Ru(C5H4C2H5)(C5H4CH3) Zr(N(C2H5)(CH3))4
Ru(C5H5)2  

 

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